News
Toshiba Memory Corporation Develops World’s First 3D Flash Memory with TSV Technology
July 2017 by Marc Jacob
Toshiba Memory Corporation announced development of the world’s first[1] BiCS
FLASH™ three-dimensional (3D) flash memory[2] utilizing Through Silicon Via
(TSV)[3] technology with 3-bit-per-cell (triple-level cell, TLC) technology.
Devices fabricated with TSV technology have vertical electrodes and vias that pass
through silicon dies to provide connections, an architecture that realizes high
speed data input and output while reducing power consumption. Real-world performance
has been proven previously, with the introduction of Toshiba’s 2D NAND Flash
memory.
Combining a 48-layer 3D flash process and TSV technology has allowed Toshiba Memory
Corporation to successfully increase product programming bandwidth while achieving
low power consumption. The power efficiency[5] of a single package is approximately
twice that of the same generation BiCS FLASH™ memory fabricated with
wire-bonding technology. TSV BiCS FLASH™ also enables a 1-terabyte (TB) device
with a 16-die stacked architecture in a single package.
Toshiba Memory Corporation will commercialize BiCS FLASH™ with TSV technology to
provide an ideal solution in respect for storage applications requiring low latency,
high bandwidth and high IOPS/Watt, including high-end enterprise SSDs.
